Silicon Carbide technology
#SiliconCarbide (#SiC) is the enabling #technology for advanced #power and #RF devices. This is largely driven by its significant advantages over previous generation materials. Listen to Piryashnee from our R&D Material Development team, share interesting snippets of this gamechanging technology.
Also, stay tuned as we will follow this up with a series of similar stories to further explore the various challenges & developments related to SiC technology one by one.
SiC wafer dicing
Here is Piryashnee from our R&D Material Development Team, talking about the challenges faced in #SiC dicing and the solutions being explored.
SiC die attach
For #SiC devices with high operating temperature, a good thermal management #dieattach material is needed to sustain the product performance and lifetime reliability. Here is Priyashnee from our R&D Material Development team, going in detail on the various die attach material options that can help achieve the desired performance results for our customers.
SiC wire bonding
Listen to Piryashnee from our R&D Material Development team, talk about the viable interconnect solutions to achieve higher current rating of #SiC devices with lower inductance.
SiC molding compound
Currently available conventional #molding compound are mainly designed for Silicon and are limited to molding temperature of 150 degrees C. Piryashnee from our R&D Material Development team talks about the necessity of identifying a molding compound that is suitable for high temperature & high voltage applications, and the progress we have made on that front.
